stevegamer
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The expanding field of spintronics, which exploits both the charge and spin of electrons to create more efficient and multifunctional electronic devices, is branching into flexible applications. Beyond established technologies such as hard disk read heads and magnetic random-access memory (MRAM), researchers are now exploring flexible spintronic systems for wearable electronics and sheet-like sensors.
For these emerging technologies, the ability to detect subtle mechanical stresses by monitoring changes in electrical resistance is critical. This requires materials that exhibit strong magnetoresistance as well as tunable magnetoelastic properties.
A recent study published in Communications Materials examines iron nitride (Fe₄N) and its chemically modified variants—Fe₄₋ₓMnₓN and Fe₄₋ᵧCoᵧN—for their potential use in flexible spintronic applications. These materials are composed of abundant, environmentally friendly elements, making them attractive for large-scale deployment.
The research team successfully fabricated high-quality single-crystal nitride films on strontium titanate (001) substrates and measured their magnetostriction—how much they deform in response to a magnetic field—along the [100] direction. Pure Fe₄N exhibited a negative magnetostriction of -121 parts per million (ppm), comparable to that of Fe-Ga alloys known for their magnetoelastic performance.
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By substituting cobalt into the structure, they achieved positive magnetostriction values, with Fe₂.₃Co₁.₇N reaching +46 ppm. This demonstrated that the magnetoelastic response of iron nitrides can be effectively tuned through elemental substitution.
To further investigate this tunability, the researchers examined how magnetoelastic properties relate to other magnetic characteristics such as saturation magnetization, magnetic anisotropy, and damping. A strong correlation between magnetic damping and magnetostriction was observed. Computational analysis supported the idea that the density of d-electron states at the Fermi level plays a key role in governing both properties.
“This study highlights that iron nitride materials can exhibit both strong spintronic and magnetoelastic properties,” said Keita Ito, assistant professor at the Institute for Materials Research (IMR) at Tohoku University. “This gives us a new framework for selecting and engineering materials for flexible spintronics.”
The team now plans to develop magnetoresistive devices using these ferromagnetic nitride films on bendable substrates, allowing them to test the materials' real-world performance in detecting mechanical stress with high sensitivity.
Because iron nitride-based compounds rely on readily available, low-impact elements, they offer a promising path forward for scalable, eco-friendly, and cost-effective flexible sensor technologies in next-generation electronics.
For these emerging technologies, the ability to detect subtle mechanical stresses by monitoring changes in electrical resistance is critical. This requires materials that exhibit strong magnetoresistance as well as tunable magnetoelastic properties.
A recent study published in Communications Materials examines iron nitride (Fe₄N) and its chemically modified variants—Fe₄₋ₓMnₓN and Fe₄₋ᵧCoᵧN—for their potential use in flexible spintronic applications. These materials are composed of abundant, environmentally friendly elements, making them attractive for large-scale deployment.
The research team successfully fabricated high-quality single-crystal nitride films on strontium titanate (001) substrates and measured their magnetostriction—how much they deform in response to a magnetic field—along the [100] direction. Pure Fe₄N exhibited a negative magnetostriction of -121 parts per million (ppm), comparable to that of Fe-Ga alloys known for their magnetoelastic performance.
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By substituting cobalt into the structure, they achieved positive magnetostriction values, with Fe₂.₃Co₁.₇N reaching +46 ppm. This demonstrated that the magnetoelastic response of iron nitrides can be effectively tuned through elemental substitution.
To further investigate this tunability, the researchers examined how magnetoelastic properties relate to other magnetic characteristics such as saturation magnetization, magnetic anisotropy, and damping. A strong correlation between magnetic damping and magnetostriction was observed. Computational analysis supported the idea that the density of d-electron states at the Fermi level plays a key role in governing both properties.
“This study highlights that iron nitride materials can exhibit both strong spintronic and magnetoelastic properties,” said Keita Ito, assistant professor at the Institute for Materials Research (IMR) at Tohoku University. “This gives us a new framework for selecting and engineering materials for flexible spintronics.”
The team now plans to develop magnetoresistive devices using these ferromagnetic nitride films on bendable substrates, allowing them to test the materials' real-world performance in detecting mechanical stress with high sensitivity.
Because iron nitride-based compounds rely on readily available, low-impact elements, they offer a promising path forward for scalable, eco-friendly, and cost-effective flexible sensor technologies in next-generation electronics.